山口直哉くん (24卒) の研究成果が、Materials Letters 誌に受理されました。論文題目は「High-light-yield and fast-response β-Ga2O3–Al2O3 thick-film scintillators epitaxially grown via chemical vapor deposition」です。
N. Yamaguchi, A. Ito, High-light-yield and fast-response β-Ga2O3–Al2O3 thick-film scintillators epitaxially grown via chemical vapor deposition, Materials Letters.
https://doi.org/10.1016/j.matlet.2024.136721